sot-323 plastic-encapsulate transistors ss8050 transistor (npn) features complimentary to ss8550 marking: y1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector power dissipation 0.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a collector cut-off current i ceo v cb =20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 100ma 120 400 dc current gain h fe(2) v ce =1v, i c = 800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b = 80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b = 80ma 1.2 v transition frequency f t v ce =10v, i c = 50ma, f=30mhz 100 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 15 pf classification of h fe (1) rank l h j range 120-200 200-350 300-400 so t -323 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
200 300 400 500 600 700 800 900 1000 1 10 100 1000 110100 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 300 1 10 100 1000 100 1000 0.1 1 10 1 10 100 1 10 100 1000 10 100 1000 0.0 0.5 1.0 1.5 2.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 1 10 100 1000 1 10 100 1000 v ce =1v collcetor current i c (ma) base-emmiter voltage v be (mv) i c v be ?? ta=100 ta=25 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =10v ta=25 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a ss8050 collector current i c (ma) base-emitter saturation voltage v besat (mv) i c v besat ?? =10 ta=100 ta=25 2000 1500 cob cib capacitance c (pf) reverse voltage v (v) v cb / v eb c ob / c ib ?? f=1mhz i e =0/i c =0 ta=25 200 20 dc current gain h fe collector current i c (ma) ta=100 ta=25 v ce =1v i c h fe ?? 1500 1000ua 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b =100ua collector current i c (a) collector-emitter voltage v ce (v) static characteristic common emitter ta=25 1500 =10 ta=100 ta=25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 1500 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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